FDS6690AS
  • ACTIVE
  • 8-SO
Product description : Transistor: N-MOSFET; unipolar; 30V; 10A; Idm: 50A; 2.5W; SO8
SPQ:1
Datasheet :
  • Specifications
  • Product Attributes
  • Documents
  • Product reviews
FET Feature Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
PCN Design/Specification Mold Compound 12/Dec/2007
FET Type MOSFET N-Channel, Metal Oxide
Series PowerTrench®, SyncFET™
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 910pF @ 15V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 12 mOhm @ 10A, 10V
Power - Max 1W
Supplier Device Package 8-SO
Gate Charge (Qg) @ Vgs 23nC @ 10V
Product Training Modules High Voltage Switches for Power Processing
Online Catalog N-Channel Logic Level Gate FETs
Family FETs - Single
Vgs(th) (Max) @ Id 3V @ 1mA
Packaging Digi-Reel®  
Datasheet:
You can comment after logging in.

Please enter the verification code in the image below:

verification code