IXTH140P10T specifications -Ameya360 electronic components purchase network


IXTH140P10T

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Product description : Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
SPQ：1
Datasheet : IXTH140P10T.pdf

Packaging:	Tube
Qg - Gate Charge:	400 nC
Pd - Power Dissipation:	568 W
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	0.056438 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	58 ns
Manufacturer:	IXYS
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	86 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 100 V
Transistor Type:	1 P-Channel
Rds On - Drain-Source Resistance:	10 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	- 2 V to - 4 V
Vgs - Gate-Source Voltage:	15 V
Mounting Style:	Through Hole
Fall Time:	26 ns
Forward Transconductance - Min:	115 S
Series:	IXTH140P10
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	- 140 A
Rise Time:	26 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTH140P10T.pdf

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Stock code :	1083909
Mfg name :	IXYS Corporation
MPN :	IXTH140P10T
Product description :	Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns

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