IRLR9343TRPBF
  • ACTIVE
  • EAR99
Product description : Single P-Channel 55 V 93 mOhm 31 nC HEXFET® Power Mosfet - TO-252-3
SPQ:1
Datasheet :
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Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 170 mOhms
Pd - Power Dissipation: 79 W
Package / Case: TO-252-3
Configuration: Single
Unit Weight: 0.139332 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 9.5 ns
Manufacturer: Infineon
Factory Pack Quantity: 2000
Brand: Infineon Technologies
RoHS:  Details
Id - Continuous Drain Current: - 20 A
Rise Time: 24 ns
Type: Digital Audio Mosfet
ECCN EAR99
Qg - Gate Charge: 31 nC
Packaging: Reel
Technology: Si
Vgs th - Gate-Source Threshold Voltage: - 1 V
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 9.5 ns
Forward Transconductance - Min: 5.3 S
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 21 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 55 V
Transistor Type: 1 P-Channel
Maximum Operating Temperature: + 175 C
Datasheet:
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