BSZ520N15NS3GATMA1
  • 量产中
  • EAR99
产品描述:
Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TSDSON-8
标准包装:1
数据手册: --
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Width: 3.3 mm
Rds On - Drain-Source Resistance: 42 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TSDSON-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 7 ns
Forward Transconductance - Min: 11 S
Series: BSZ520N15
Factory Pack Quantity: 5000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 10 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 150 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 12 nC
Pd - Power Dissipation: 57 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 2 V
Configuration: 1 N-Channel
Mounting Style: SMD/SMT
Fall Time: 3 ns
Length: 3.3 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSZ520N15NS3 BSZ520N15NS3GXT G SP000607022
RoHS:  Details
Id - Continuous Drain Current: 21 A
Rise Time: 5 ns
Maximum Operating Temperature: + 150 C
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