| BSZ520N15NS3GATMA1 | ||
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| Product description : Single N-Channel 150 V 52 mOhm 8.7 nC OptiMOS™ Power Mosfet - TSDSON-8 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Width: | 3.3 mm |
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| Rds On - Drain-Source Resistance: | 42 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TSDSON-8 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 7 ns |
| Forward Transconductance - Min: | 11 S |
| Series: | BSZ520N15 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 10 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Reel |
| Qg - Gate Charge: | 12 nC |
| Pd - Power Dissipation: | 57 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Configuration: | 1 N-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 3 ns |
| Length: | 3.3 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSZ520N15NS3 BSZ520N15NS3GXT G SP000607022 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 21 A |
| Rise Time: | 5 ns |
| Maximum Operating Temperature: | + 150 C |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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