BSC265N10LSFGATMA1 specifications -Ameya360 electronic components purchase network


BSC265N10LSFGATMA1

ACTIVE PG-TDSON-8 EAR99
Product description : Single N-Channel 100 V 26.5 mOhm 16 nC OptiMOS™ Power Mosfet - TDSON-8
SPQ：5000
Datasheet : --

FET Feature	Logic Level Gate
Package / Case	8-PowerTDFN
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta), 40A (Tc)
Part Status	Active
Manufacturer	Infineon Technologies
Series	OptiMOS™
Vgs(th) (Max) @ Id	2.4V @ 43µA
Operating Temperature	-55°C ~ 150°C (TJ)
Packaging	Digi-Reel®
Rds On (Max) @ Id, Vgs	26.5 mOhm @ 20A, 10V
Power - Max	78W
Supplier Device Package	PG-TDSON-8
Gate Charge (Qg) @ Vgs	21nC @ 10V
Category	Discrete Semiconductor Products
FET Type	MOSFET N-Channel, Metal Oxide
Family	Transistors - FETs, MOSFETs - Single
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	1600pF @ 50V
ECCN	EAR99

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Stock code :	1018037
Mfg name :	Infineon Technologies
MPN :	BSC265N10LSFGATMA1
Product description :	Single N-Channel 100 V 26.5 mOhm 16 nC OptiMOS™ Power Mosfet - TDSON-8

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