PMGD280UN,115 specifications -Ameya360 electronic components purchase network


PMGD280UN,115

ACTIVE 6-TSSOP ECL99
Product description : PMGD280UN Series 20 V 660 mOhm 0.89 nC 0.4 W Dual N-Channel SMT MOSFET - SOT-363
SPQ：3000
Datasheet : PMGD280UN,115.pdf

FET Feature	Logic Level Gate
Package / Case	6-TSSOP, SC-88, SOT-363
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	870mA
PCN Packaging	Lighter Reels 02/Jan/2014
PCN Design/Specification	Resin Hardener 02/Jul/2013
FET Type	2 N-Channel (Dual)
Series	TrenchMOS™
Vgs(th) (Max) @ Id	1V @ 250µA
Input Capacitance (Ciss) @ Vds	45pF @ 20V
Rds On (Max) @ Id, Vgs	340 mOhm @ 200mA, 4.5V
Power - Max	400mW
Supplier Device Package	6-TSSOP
Standard Package	3,000
Gate Charge (Qg) @ Vgs	0.89nC @ 4.5V
Packaging	Tape & Reel (TR)
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Arrays
Mounting Type	Surface Mount
ECCN	ECL99

Datasheet： PMGD280UN,115.pdf

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Stock code :	1007137
Mfg name :	NXP Semiconductors
MPN :	PMGD280UN,115
Product description :	PMGD280UN Series 20 V 660 mOhm 0.89 nC 0.4 W Dual N-Channel SMT MOSFET - SOT-363

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