IRF9393TRPBF specifications -Ameya360 electronic components purchase network


IRF9393TRPBF

ACTIVE EAR99
Product description : Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
SPQ：1
Datasheet : IRF9393TRPBF.pdf

Minimum Operating Temperature:	- 55 C
Rds On - Drain-Source Resistance:	25.6 mOhms
Pd - Power Dissipation:	2.5 W
Package / Case:	SOIC-8
Configuration:	Single
Unit Weight:	0.017870 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	16 ns
Manufacturer:	Infineon
Factory Pack Quantity:	4000
Brand:	Infineon Technologies
RoHS:	Details
Id - Continuous Drain Current:	- 9.2 A
Rise Time:	44 ns
Maximum Operating Temperature:	+ 150 C
Qg - Gate Charge:	14 nC
Packaging:	Reel
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	- 1.8 V
Vgs - Gate-Source Voltage:	25 V
Mounting Style:	SMD/SMT
Fall Time:	49 ns
Forward Transconductance - Min:	13 S
Transistor Polarity:	P-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	55 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	- 30 V
Transistor Type:	1 P-Channel
ECCN	EAR99

Datasheet： IRF9393TRPBF.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	100303
Mfg name :	Infineon Technologies
MPN :	IRF9393TRPBF
Product description :	Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：