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| 产品描述：
MOSFET N-CH 650V 15A 4VSON
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | 4-PowerTSFN |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C7 |
| Vgs(th) (Max) @ Id | 4V @ 440µA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 4.4A, 10V |
| Power - Max | 102W |
| Supplier Device Package | PG-VSON-4 |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1670pF @ 400V |
| 数据手册： |
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