Top Ten IC Design Houses Ride <span style='color:red'>Wave</span> of Seasonal Consumer Demand and Continued AI Boom to See 17.8% Increase in Quarterly Revenue in 3Q23, Says TrendForce
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Top Ten IC Design Houses Ride Wave of Seasonal Consumer Demand and Continued AI Boom to See 17.8% Increase in Quarterly Revenue in 3Q23, Says TrendForce

　　TrendForce reports that 3Q23 has been a historic quarter for the world’s leading IC design houses as total revenue soared 17.8% to reach a record-breaking US$44.7 billion. This remarkable growth is fueled by a robust season of stockpiling for smartphones and laptops, combined with a rapid acceleration in the shipment of generative AI chips and components. NVIDIA, capitalizing on the AI boom, emerged as the top performer in revenue and market share. Notably, analog IC supplier Cirrus Logic overtook US PMIC manufacturer MPS to snatch the tenth spot, driven by strong demand for smartphone stockpiling.　　NVIDIA’s revenue soared 45.7% to US$16.5 billion in the third quarter, bolstered by sustained demand for generative AI and LLMs. Its data center business—accounting for nearly 80% of its revenue—was a key driver in this exceptional growth.　　Qualcomm, riding the wave of its newly launched flagship AP Snapdragon 8 Gen 3 and the release of new Android smartphones, saw its third-quarter revenue climb by 2.8% QoQ to around US$7.4 billion. However, NVIDIA’s rapid growth eroded Qualcomm’s market share to 16.5%. Broadcom, with its strategic emphasis on AI server-related products like AI ASIC chips, high-end switches, and network interface cards, along with its seasonal wireless product stockpiling, managed to offset weaker demand in server storage connectivity and broadband. This strategic maneuvering led to a 4.4% QoQ revenue boost to US$7.2 billion.　　AMD witnessed an 8.2% increase in its 3Q revenue, reaching US$5.8 billion. This success was due to the widespread adoption of its 4th Gen EPYC server CPUs by cloud and enterprise customers and the favorable impact of seasonal laptop stockpiling. MediaTek's revenue rose by 8.7% to US$3.5 billion in the third quarter, buoyed by a healthy replenishment demand for smartphone APs, WiFi6, and mobile/laptop PMIC components, as inventories across brand clients stabilized.　　Cirrus Logic ousts MPS from tenth position thanks to smartphone inventory replenishment　　Marvell also made significant gains, with its third-quarter revenue hitting US$1.4 billion, a 4.4% QoQ increase. This growth was primarily driven by increasing demand for generative AI from cloud clients and the expansion of its data center business—despite declines in sectors like enterprise networking and automotive. However, the outlook for some sectors remains mixed, with areas like TV and networking still facing uncertainties, leading to a cautious approach from clients. This resulted in some IC design companies, such as Novatek and Realtek, witnessing a decline in revenues by 7.5% and 1.7%, respectively.　　Will Semiconductor benefited from the demand for Android smartphone components, breaking free from past inventory corrections with a 42.3% increase in 3Q revenue to US$752 million. Cirrus Logic, similarly capitalizing on the smartphone component stockpiling trend, saw a significant 51.7% jump in revenue to US$481 million, ousting MPS from the top ten.　　In summary, TrendForce forecasts sustained growth for the top ten IC design houses in the upcoming fourth quarter. This optimistic outlook is underpinned by a gradual normalization of inventory levels and a modest seasonal rebound in the smartphone and notebook market. Additionally, the global surge in LLMs extends beyond CSPs, internet companies, and private enterprises, reaching regional countries and small-to-medium businesses, further bolstering this positive revenue trend.
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Release time：2023-12-22 16:13 reading：1682 Continue reading>>
Nidec Drive Technology Develops Smart-FLEXWAVE, the World’s First Precision Reducer with Multiple Built-in Sensors
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Nidec Drive Technology Develops Smart-FLEXWAVE, the World’s First Precision Reducer with Multiple Built-in Sensors

　　Nidec Drive Technology Corporation (“Nidec Drive Technology” or the “Company”), a member of Nidec Corporation’s group companies, announced today that it has developed Smart-FLEXWAVE, the world-first product that combines FLEXWAVE, an existing precision control reducer for robots and machine tools, with built-in torque, temperature, and angle sensors.　　FLEXWAVE, the currently available precision reducer with a wave gear mechanism, is used chiefly in industrial robots’ joints for its ability to achieve a high reduction ratio with a single axis, among other features such as light weight, compact size, high rotation accuracy, and super-low backlash. The Smart₋FLEXWAVE, the newly developed reducer that combines torque, temperature, and angle sensors in its mechanism, can detect output torque, temperature inside a reducer, and input axis angle while maintaining an existing reducer’s space.　　This feature enables Smart₋FLEXWAVE to contribute to making smaller and lighter collaborative robots, detect a robot crashing into an obstacle, and monitor screw tightening torque, overheat, stopping place, etc., all remotely via a network, boosting productivity.　　The Company stays committed to providing a variety of fields with its high-efficiency industrial machines based on its reducer- and continuously variable transmission-based knowhow to contribute to productivity enhancement and automation.
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Release time：2023-12-12 14:24 reading：1782 Continue reading>>
ROHM’s New High Power 120W Laser Diode for LiDAR: Increasing Measurement Range by Reducing <span style='color:red'>Wave</span>length Temperature Dependence by 66%
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ROHM’s New High Power 120W Laser Diode for LiDAR: Increasing Measurement Range by Reducing Wavelength Temperature Dependence by 66%

　　ROHM has developed a high-power laser diode - the RLD90QZW8. It is ideal for industrial equipment and consumer applications requiring distance measurement and spatial recognition.　　In recent years, LiDAR is being increasingly adopted in a wide range of applications that require automation - including AGVs (Automated Guided Vehicles), robot vacuums, and autonomous vehicles - where it is necessary to accurately measure distance and recognize space. In this context, there is a need to improve the performance and output of laser diodes when used as light sources to increase detection distance and accuracy.　　To meet this demand, ROHM established original patented technology to achieve a narrower emission width that contributes to longer range and higher accuracy in LiDAR applications. In 2019, ROHM released a 25W laser diode RLD90QZW5 followed by a 75W laser diode RLD90QZW3 in 2021. In response to the growing market demand for even higher output, ROHM developed a new 120W laser diode.　　The RLD90QZW8 is a 120W infrared high output laser diode developed for LiDAR used in distance measurement and spatial recognition in 3D ToF systems. Original device development technology allows ROHM to reduce the temperature dependence of the laser wavelength by 66% over general products, to just ⊿11.6nm (Ave. 0.10nm/°C). This makes it possible to narrow the bandpass filter while extending the detection range of LiDAR. At the same time, a uniform light intensity of 97% is achieved over the industry's smallest class* of emission width of 270µm, representing a range of 264µm that contributes to higher resolution. Additional features that include high power-to-light conversion efficiency (PCE) enables efficient optical output that contributes to lower power consumption in LiDAR applications.　　A variety of design support materials necessary for integrating and evaluating the new product is available free of charge on ROHM’s website that facilitate market introduction. In order to drive laser diodes with high nano-second order speed required for LiDAR applications, ROHM developed a reference design available now that combines ROHM’s 150V EcoGaN™ HEMT and gate drivers.　　ROHM has also acquired certification under the IATF 16949 automotive quality management standard for both front-end and back-end processes at its manufacturing facilities. As a result, product development of laser diodes for automotive applications (AEC-Q102 compliant) is underway, with commercialization planned by the end of 2024.　　Application ExamplesConsumer: Robot vacuums, Laser rangefinders　　Industrial: AGVs (Automated Guided Vehicles), service robots, 3D monitoring systems (sensors for human/object detection)　　and more...　　Support PageA broad range of design data is available on ROHM’s website free of charge, including simulation (SPICE) models, board development data, and application notes on drive circuit design necessary for integration and evaluation that supports quick market introduction.　　Reference DesignsReference designs for LiDAR incorporating these new products together with ROHM’s 150V EcoGaN™ and high-speed gate driver (BD2311NVX series) are now available on ROHM’s website.　　Reference Design Part Nos.　　・REFLD002-1　　(120W High Power Laser Diode [RLD90QZW8] built-in)　　・REFLD002-2　　(75W High Power Laser Diode [RLD90QZW3] built-in)　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.　　Online Sales InformationSales Launch Date: September 2023　　Pricing: $30.0/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser and Farnell　　The product will be offered at other online distributors as they become available.　　Target Product: RLD90QZW8-00A　　Online Distributors　　TerminologyLiDAR　　Short for Light Detection and Ranging, a type of application that uses ToF (Time of Flight) system (comprised of a light source and ToF or image sensor) to sense ambient conditions.　　3D ToF System　　An abbreviation for Time of Flight, a spatial measurement system which, as its name implies, measures the flight time of a light source. Refers to a system that uses ToF to perform 3D spatial recognition and distance measurement.　　Bandpass Filter　　A filter that allows only signals in a specific light wavelength band to pass through. In optical devices, a narrow bandpass filter range allows for efficient extraction of light close to the peak waveform. This minimizes the effects of disturbance light noise such as sunlight, enabling lower power consumption at the same distance or longer range at the same optical output.　　IATF 16949　　IATF is the short for International Automotive Task Force, a quality management standard for the automotive industry. Based on the international standard ISO 9001 with additional specific requirements, compliance with IATF 16949 enables automakers and suppliers to meet international quality standards.　　AEC-Q102　　AEC stands for Automotive Electronics Council, an organization (comprised of major automotive manufacturers and US electronic component makers) responsible for establishing reliability standards for automotive electronics. Q102 is a standard specifically intended for optical devices.
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Release time：2023-12-05 15:21 reading：1722 Continue reading>>
Tech Giants Launch AI Arms Race, Aiming to Spark a <span style='color:red'>Wave</span> of Smartphone and Computer Upgrades
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Tech Giants Launch AI Arms Race, Aiming to Spark a Wave of Smartphone and Computer Upgrades

　　According to CNA’s news, the potential business opportunities in artificial intelligence have spurred major tech giants, with NVIDIA, AMD, Intel, MediaTek, and Qualcomm sequentially launching products featuring the latest AI capabilities.　　This AI arms race has expanded its battleground from servers to smartphones and laptops, as companies hope that the infusion of AI will inject vitality into mature markets.　　Generative AI is experiencing robust development, with MediaTek considering this year as the “Generative AI Year.” They anticipate a potential paradigm shift in the IC design industry, contributing to increased productivity and significantly impacting IC products.　　This not only brings forth new applications but also propels the demand for new algorithms and computational processors.　　MediaTek and Qualcomm recently introduced their flagship 5G generative AI mobile chips, the Dimensity 9300 and Snapdragon 8 Gen 3, respectively. The Dimensity 9300, integrated with the built-in APU 790, enables faster and more secure edge AI computing, capable of generating images within 1 second.　　MediaTek points out that the smartphone industry is experiencing a gradual growth slowdown, and generative AI is expected to provide new services, potentially stimulating a new wave of consumer demand growth. Smartphones equipped with the Dimensity 9300 and Snapdragon 8 Gen 3 are set to be released gradually by the end of this year.　　Targeting the AI personal computer (PC) market, Intel is set to launch the Meteor Lake processor on December 14. Two major computer brands, Acer and ASUS, are both customers for Intel’s AI PC.　　High-speed transmission interface chip manufacturer Parade and network communication chip manufacturer Realtek are optimistic. The integration of AI features into personal computers and laptops is expected to stimulate demand for upgrades, leading to a potential increase in PC shipments next year.　　In TrendForces’ report on November 8th, it has indicated that the emerging market for AI PCs does not have a clear definition at present, but due to the high costs of upgrading both software and hardware associated with AI PCs, early development will be focused on high-end business users and content creators.　　For consumers, current PCs offer a range of cloud AI applications sufficient for daily life and entertainment needs. However, without the emergence of a groundbreaking AI application in the short term to significantly enhance the AI experience, it will be challenging to rapidly boost the adoption of consumer AI PCs.　　For the average consumer, with disposable income becoming increasingly tight, the prospect of purchasing an expensive, non-essential computer is likely wishful thinking on the part of suppliers. Nevertheless, looking to the long term, the potential development of more diverse AI tools—along with a price reduction—may still lead to a higher adoption rate of consumer AI PCs.　　Read more　　Key Development Period for AI PCs in 2024; Global Notebook Market Set to Rebound to Healthy Supply-Demand Cycle with an Estimated Growth Rate of 3.2%, Says TrendForce。
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Release time：2023-11-21 10:41 reading：156 Continue reading>>
Top 7 Global RF Microwave MLCC Manufacturers
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Top 7 Global RF Microwave MLCC Manufacturers

　　Welcome to the exciting world of RF Microwave MLCC Manufacturers! Get ready to dive into the top 7 global RF microwave MLCC manufacturers who are revolutionizing the industry with their cutting-edge technology and innovative solutions. From delivering superior performance to pushing the boundaries of what’s possible, these manufacturers are leading the way in shaping the future of RF Microwave MLCCs.　　一、Murata　　Murata Manufacturing Co., Ltd. is a Japanese manufacturer of electronic components, based in Nagaokakyo, Kyoto. It produces ceramic passive electronic components, primarily capacitors, and has a majority marketshare worldwide in ceramic filters, high-frequency parts, and sensors.　　As of March 31, 2013 Murata Manufacturing has 24 subsidiaries in Japan and 52 overseas in the United States, Canada, Mexico, Brazil, Germany, France, Italy, the United Kingdom, Switzerland, the Netherlands, Spain, Hungary, Finland, China, Taiwan, South Korea, Singapore, Malaysia, the Philippines, Thailand, Hong Kong, Vietnam and India.　　二、KYOCERA AVX　　KYOCERA AVX is a leading global manufacturer & supplier of advanced electronic components and innovative sensor, control, connectors and antenna solutions.　　KYOCERA AVX has an expansive global footprint comprised of several dozen research, development, and manufacturing facilities spanning more than 15 countries and staffed with talented personnel dedicated to innovation, component quality, and customer service.　　三、Knowles　　Knowles is a market leader and global provider of advanced micro-acoustic microphones and speakers, audio processing, and precision device solutions, serving the consumer electronics, communications, MedTech, defense, electric vehicle, and industrial markets.　　Knowles uses its leading position in SiSonic™ MEMS microphones, balanced armature speakers, and strong capabilities in audio processing technologies to optimize audio systems and improve the user experience in mobile, ear, IoT, computing, and MedTech applications. Knowles is also a leader in high-performance capacitors and RF solutions for a diverse set of markets.　　四、Exxelia　　Exxelia is a leading designer and manufacturer of high-reliability passive components and precision subsystems focusing on highly demanding markets, applications and functions. Exxelia’s product portfolio includes a wide range of capacitors, magnetics, resistors, filters, position sensors, slip rings and high-precision mechanical parts. Products are commonly used for power electronics, power generation, energy storage, and signal filtering functions in numerous leading industrial areas such as aviation, defense, space, medical, railway, oil & gas and telecommunications. Exxelia is valued for its ability to meet complex specifications and develop standard and custom products complying with the most demanding qualifications (MIL, ESA).　　五、Dalicap　　Dalian Dalicap Technology Co., Ltd., located in Dalian of China, one of its famous industrial bases, is a professional enterprise specializing in R&D, manufacturing and sales of multi-layer ceramic capacitors (MLCC). Dalicap is also a leading supplier of Hi-Q, RF/Microwave MLCC applied, especially in the fields of MRI, semiconductor devices, industrial laser equipment, testing and analyzing instruments, high-speed railway and 4G/5G PA etc.　　六、Johanson Technology　　Johanson Technology Incorporated is located in Camarillo, California, and has over twenty-five years of experience specializing in the design and manufacture of high-quality RF and microwave ceramic chip capacitors, inductors and integrated passives.　　JTI previously operated as the Special Products Group of Johanson Dielectrics and in 1993 was separately incorporated to consistently focus its high-frequency expertise in meeting customer needs for specialized and custom ceramic capacitor products as well as embark on research and development of new passive ceramic components for the wireless market sector.　　七、VISHAY　　Vishay Intertechnology, Inc. is an American manufacturer of discrete semiconductors and passive electronic components founded by Polish-born businessman Felix Zandman. Vishay has manufacturing plants in Israel, Asia, Europe, and the Americas where it produces rectifiers, diodes, MOSFETs, optoelectronics, selected integrated circuits, resistors, capacitors, and inductors.　　Vishay is one of the world’s foremost manufacturers of power MOSFETs. They have a wide range of power electronic applications, including portable information appliances, internet communications infrastructure, power integrated circuits, cell phones, and notebook computers.
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Release time：2023-11-14 10:59 reading：1404 Continue reading>>
AMEYA360:Amphenol Times Microwave Systems Commercial Space Assemblies
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AMEYA360:Amphenol Times Microwave Systems Commercial Space Assemblies

　　Amphenol Times Microwave Systems Commercial Space Assemblies include three kinds of space assembly cables: MaxGain?, InstaBend?, and InstaBend PhaseStable. MaxGain assemblies are high-performance, ultra-low-loss, high-frequency microwave coaxial cables built with spiral outer conductor technology. InstaBend cables are flexible, coaxial microwave assemblies that connect RF circuit cards, modules, and enclosure panels.     The cable can be bent very closely behind the connector, simplifying cable routing. InstaBend PhaseStable assemblies are low-loss, highly flexible, foam-core micro coaxial cables with a broad frequency range and strong durability. Amphenol Times Microwave Systems Commercial Space Assemblies are specifically designed for space assembly applications.　　FEATURES　　30Mrads radiation environment　　-90°C to +150°C temperature range　　T-VAC compatible　　TML ≤1% and CVCM ≤0.01% outgassing per ASTM E595　　Baseline electrical performance (IL, VSWR)　　Low outgassing materials per ASTM E595　　Class 100,000 clean room manufacturing　　Vented connectors, if applicable　　Optimized for low attenuation　　Ultra-stable performance with flexure　　High shielding effectiveness (>90dB)　　APPLICATIONS　　Test assemblies　　RF satellite assemblies in the payload　　RF transmit and receive assemblies in the antenna　　Board connectors　　Adapters　　Ground station assemblies
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Release time：2023-03-31 09:34 reading：2447 Continue reading>>
Ameya360:Will GaN Technology Close the Performance Gap for 5G mm<span style='color:red'>Wave</span>
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Ameya360:Will GaN Technology Close the Performance Gap for 5G mmWave

　　There is no doubt that 5G’s higher bandwidth, lower latency and higher availability make it well suited for a range of applications. However, the higher-frequency bands, particularly millimeter-wave (mmWave), also bring challenges around delivering these improvements. As a result, power IC manufacturers are looking at more efficient technologies, such as wide-bandgap (WBG) semiconductors like gallium nitride (GaN) and silicon carbide (SiC), to enhance performance and lower costs in these new networks.　　What does the mmWave band bring to the table? First, it expands the spectrum for wireless data communications, which helps increase the amount of data that can be transmitted and lowers latency, and secondly, it is ultra-fast. Yet industry players said that to deliver high, 20-Gbits/s data rates of 5G, the mmWave spectrum will need to be rolled out.　　However, mmWave has several drawbacks: an ultra-short range and the signals easily being blocked by things like buildings, walls, trees and even adverse weather conditions like rain.　　The real benefits of 5G mmWave are high download speeds and low latency, but the downside is poor signal propagation because of the higher frequency, making it easily blocked by windows and walls, and general distance makes it more difficult propagation-wise, said James Edmondson, senior technology analyst at IDTechEx.　　While silicon technologies like traditional LDMOS semiconductors still provide high performance at lower frequencies, WBG semiconductors like GaN-based amplifiers that can handle up to the 100-GHz range will be needed for mmWave frequencies. GaN semiconductors already offer benefits in the sub-6-GHz range, leveraging its higher density and efficiency and lower parasitic capacitance. But there are still some developmental challenges that GaN presents before it can be fully adopted into mmWave networks.　　5G comes in two flavors: sub-6 GHz that supports mid (about 3.5 GHz to 7 GHz) and low (<1 GHz) frequencies, now being deployed in mobile networks, and the ultra-high–frequency band (mmWave), typically noted as between 24 GHz and 100 GHz, which is still at the very early stage of development.　　Most of the 5G deployments today are based on sub-6 GHz, according to IDTechEx, due to its high throughput and cost. Despite its ultra-fast speed, mmWave is still too expensive to deploy and it has disadvantages around line of sight. About 1 million mmWave antennas are currently deployed, according to the market research firm, with a forecast of 50 million by 2033.　　What will speed up 5G mmWave deployment?　　Although many industry players say it is simply too early for 5G mmWave deployments, mostly because of cost, GaN power devices will play a role in developing more cost-effective networks and achieving the promise of 5G.　　One of the roadblocks to fast-tracking 5G mmWave is a lack of market demand. “When 5G was first talked about, there were a lot of these killer potential applications like remote surgeries and the metaverse, but not all of that has taken off yet, so there is a bit of a market pull lacking at the moment,” said Edmondson.　　GaN RF power IC suppliers like NXP Semiconductors also cited the lack of demand as a challenge. NXP offers a wide selection of RF power devices, including GaN-on-silicon, silicon LDMOS, silicon germanium (SiGe) and gallium arsenide (GaAs) technologies.　　“What we saw is a lot of hype and interest because of these enormous swaths of bandwidth that became available, and there was a lot of initial excitement with everyone rushing to get products out, including NXP,” said Geoff Tucker, director of RF systems engineering in the Radio Power business unit at NXP Semiconductors. “It kind of fizzled a little bit when it came to actual shipments. I think it still has a role in networks, but as of yet, it doesn’t seem like it’s truly found its niche, whether it be for a mobile technology or fixed wireless access.”　　However, how this technology evolves, given the large pieces of spectrum, which is the gold of the industry, and where that might be going is of interest to NXP, he added.　　Despite the lack of market demand today, power IC manufacturers are working to solve the biggest technology challenges, including higher integration, to deliver high-efficiency power amplifiers, which will be needed to reduce power consumption and shrink form factors in radios and antennas. GaN-based devices are at the top of their list. Although most of them are working with GaN-on-SiC, there is some work under development for GaN-on-silicon for mmWave.　　Yole Intelligence reports a lot of activity around GaN-on-silicon. “The company OMMIC is proposing GaN-on-Si beamformers for 5G mmWave, and this solution is expected to be seen penetrating the market in the coming years,” said Cyril Buey, technology and market analyst for RF Devices and Technologies at Yole Intelligence, part of Yole Group. “We also see the startup Finwave developing FinFET GaN-on-Si for mmWave technology, as well as STMicroelectronics and GlobalFoundries working on GaN-on-Si devices, so a lot of activities on GaN-on-Si.”　　However, Yole is less optimistic about GaN-on-SiC devices for 5G mmWave. “Qorvo has a portfolio of GaN-on-SiC power amplifiers in mmWave frequencies, but for now, at Yole Intelligence, we don’t see 5G mmWave products using GaN-on-SiC devices,” he added.　　Buey thinks there is room for GaN-on-Si for 5G mmWave applications but not for GaN-on SiC, mainly due to the high level of integration needed for mmWave devices. “In the end, GaN-on-SiC might be suitable for backhaul applications, also at mmWave frequencies, where the system architecture is simpler.”　　Why GaN for mmWave?　　It is well known in the industry that SiC and GaN offer several advantages over silicon power devices, including lower switching and lower conduction losses. SiC also offers reduced thermal management, while GaN delivers higher switching frequencies.　　The primary advantage of GaN is its higher power density, which allows for a smaller-form factor and thus a reduction in overall system size, at the same performance. This can benefit mmWave base stations by allowing a signal to be transmitted with more power, translating into a wider coverage area.　　LDMOS is good up to 4 GHz, but above that, it starts to become quite inefficient to operate, said Edmondson. “The big challenge for GaN, especially initially, was more toward the cost of the material, so silicon technology is very mature and very cheap. But because of the high power density, you can get away with using a lot less material, so there is somewhat of a tradeoff. Typically, GaN has been more expensive, but also on top of that, there is a general lack of industry experience with the material.”　　“There are some physics involved here, but what GaN does is concentrate more of the power into a smaller area to achieve the same goal from the amplifier, and therefore, it is a nice technology to help us densify the overall designs,” said Tucker. “You still have to put all the other analog functionality in there—switches, gain blocks, attenuators and whatever else we decide to throw in a given amplifier—but it does help us to miniaturize things if it can be done successfully.”　　The biggest challenges of mmWave around line of sight, range and signal propagation (high losses) will need to be solved. Some of the answers will require changes in the RF circuitry and power amplifiers, although there are technologies like massive MIMO, miniature antenna arrays and smart active repeaters being used to resolve some of these issues.　　“When you move to mmWave, the antennas shrink, which increases your power density per device, so the actual number of antenna elements within a device increases a lot,” said Edmondson. “You can be looking at thousands of antenna elements in a package, and what that actually means is that the power demand on each individual amplifier goes down. I think that’s been a big reason why we haven’t seen GaN adopted significantly in mmWave 5G yet. If you can get away with using the existing silicon technology, then that’s probably going to be the easier way to do it.　　“There will be more adoption of GaN in the future in mmWave, but it does face some extra challenges like component integration and the fact that there’s actually less power demand on each individual amplifier,” he added.　　Ultimately, the choice of technology—silicon- or WBG-based—comes down to the application. “For an antenna design, it’s the specifications of the amplifier that is going to sell it to me,” said Edmondson. But at the same time, if the GaN device requires extra work around mounting it on the board or dealing with thermal management, those are obviously design tradeoffs, he added.　　The No. 1 design challenge is the architecture of the radios themselves and what feature sets get put into them because it is still at the very early stage, said Tucker.　　First-generation radios are purely linear in nature, and the amplifier final stages don’t take advantage of high-efficiency techniques that are found elsewhere in the industry, Tucker said. “That’s slowly changing, where you start to see higher-efficiency architectures and digital predistortion coming online for these higher-frequency radios, but still, it’s very simplistic. It’s not nearly as mature as well-established communication systems.”　　There is a trend toward higher power and fewer transmit paths, which is important when it comes to GaN and what it can actually do with high frequencies, he added.　　Tucker also noted cost as a design challenge. “We see a simplistic architecture being employed for these mmWave radios that are purely analog beamforming, which is probably not the preferred way to do it. It’s certainly not what we use at sub-6 GHz.”　　The reason is simple economics, Tucker explained. These high-order types of transmitters have a lot of analog functionality with a lot of integration and pairing with digital front ends that are used in modern radios, he added.　　GaN-on-SiC, which NXP uses today, will be very competitive and work extremely well at up to 30–40 GHz, but beyond 40 GHz, you will start to lose some of that “superb” efficiency, said Christopher Dragon, director of device engineering in the Radio Power business unit at NXP Semiconductors.　　Despite some challenges in the higher-frequency ranges, Dragon believes GaN-on-SiC will still have a play based on research in the industry that is looking to extend the frequency range. One area of research and discussion is N-polar GaN-on-SiC. “I think the research will lead us in a direction that will work,” he said.　　Silicon LDMOS, which would rule the industry for base stations for years, started to lose its efficiency at about 2–3 GHz, and that is where there is a transition to GaN, Dragon said. “I see that happening [loss in efficiency] with GaN-on-SiC in the 30- to 40-GHz range.”　　As the frequency goes up, with all of the parasitics in the device, you start to lose that efficiency, and that is what kills off the usability of the technology, Dragon said. “That is where you’re into problems trying to design power amplifiers. You really need those things to run efficiently and you need them to be linear. The power-added efficiency is going to be what gets you.”　　Designers also have to consider thermal management.　　“GaN is great: It’s got a lot of power density per millimeter of periphery in the devices and it’s really cranking out the watts, but you’ve got to manage all that heat, which is why the SiC is so important,” Dragon said. “It’s very good normally, but as you approach these mmWaves, there are actually big debates around moving to GaN-on-Si for a couple of reasons. One is that you don’t necessarily need the SiC for the thermals anymore and silicon is going to be much cheaper than GaN-on-SiC.”　　“Thermals still are something that need to be strongly considered in these radios because you have an area-per-watt problem that needs to be solved and the thermal design of the entire radio is still very important and a very strong consideration for designers,” added Tucker.　　Monolithic microwave integrated circuits (MMICs) will also become more important at those higher frequencies, Dragon said. Integrating all of those different components, making them more repeatable and reliable, will become really important at those higher frequencies, he added.　　“At higher and higher frequencies, integration becomes important—we can’t use traditional chip and wire interconnects,” agreed Tucker. “If we were to go take GaN-on-SiC and do a full-blown MMIC type of design, that would be horribly expensive. It would probably be wonderful for the power amplifier but pretty poor for all the other features and functionality that wind up on these chips. So the trick to GaN at a higher frequency is how we can put it together with another technology that supports the other analog functionality that we need in a cost-effective way.”　　Whether it will be a chiplet type of approach using GaN-on-SiC die along with a SiGe die or GaN-on-Si integrated on a bigger chip, that all remains to be seen, but these are the sorts of things that are being discussed at conferences and in universities that are doing research to tackle exactly that problem, he added.　　“It is more difficult to do, but we will see more of it as we go up higher in frequency, without a doubt,” Dragon said.　　“I think GaN has a good place in those mmWave ranges,” he added. “In terms of the R&D aspect, whether it moves over to N-polar or GaN-on-Si because of the integration piece, those are interesting questions, but I think GaN will absolutely be there. But traditional silicon LDMOS types will not be there at all.”
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Release time：2023-01-30 11:00 reading：1749 Continue reading>>
Perforce Software to acquire Rogue <span style='color:red'>Wave</span> Software
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Perforce Software to acquire Rogue Wave Software

　　Perforce Software, a developer of enterprise-grade DevOps-focused software solutions, is to acquire Rogue Wave Software, an independent provider of cross-platform software developer tools and embedded components.　　The new combination of Perforce and Rogue Wave is intended to deliver a full suite of solutions that will not only improve developer productivity but support DevOps at scale. This is the sixth acquisition by Perforce in the last two years since embarking on an aggressive growth strategy to expand its portfolio across the technology development lifecycle.　　Terms of the deal are not being disclosed, although the acquisition is expected to close in February of this year.　　Rogue Wave provides solutions that help enterprises to optimise their software development and build, connect, and secure applications. The company has relationships with more than 5,600 customers across industries including financial services, technology, healthcare, government, entertainment, and manufacturing. Based in Louisville, Colorado, the company has 16 offices throughout the world.　　“This transformational acquisition further expands our global footprint and broadens our offerings. Rogue Wave’s software suite strengthens Perforce’s existing static code analysis and automated test offerings, and also adds new capabilities in the areas of dynamic code analysis, API management, project visualization, developer productivity, and embedded analytics,” said Mark Ties, Perforce CEO.　　Perforce continues to build out its DevOps-focused software portfolio that looks to meet the needs of technology development teams that are challenged with multiple dimensions of scale but still must deliver products securely at a rapid pace.　　"Software development is growing increasingly complex, driving the need for platforms and solutions that can help enterprises simplify their applications and shorten cycle times. With continuously evolving customer demands, it has never been more important for enterprises to deliver high-quality products and solutions quickly," said Brian Pierce, Rogue Wave CEO.
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Release time：2019-01-23 00:00 reading：1727 Continue reading>>
Broadcom to Help Design <span style='color:red'>Wave</span>’s 7-nm AI Chip
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Broadcom to Help Design Wave’s 7-nm AI Chip

Wave Computing has set its sights on becoming the first AI startup to develop and deploy a 7-nm AI processor in its AI systems.EE Times has learned that Wave has snagged Broadcom Inc. as an ASIC designer for the new 7-nm project. The two companies will collaborate on development of Wave’s next-generation Dataflow Processing Unit (DPU) by using Taiwan Semiconductor Manufacturing Co.’s 7-nm process node.The new 7-nm DPU — scheduled for delivery by Broadcom at an undisclosed date — will be “designed into our own AI system,” confirmed Wave’s CEO, Derek Meyer. He added that the same chip may become available to others “if there is a market demand.”“Wave is hoping to get a jump on the startup competition with a 7-nm part,” observed Kevin Krewell, principal analyst at Tirias Research. “Most startups don’t have the expertise to build a 7-nm part just yet.” He explained that Broadcom’s involvement made this possible. Broadcom, he noted, “does have more senior ASIC circuit design experience through the acquisition of LSI Logic.”Wave’s current-generation DPU is based on a 16-nm process design.“Among our peers who are designing a new breed of AI accelerators, we will be the first to have access to 7-nm physical IP — such as 56-Gbps and 112-Gbps SerDes — thanks to Broadcom,” noted Meyer. Broadcom is “instrumental to bringing this 7-nm project to fruition,” he explained, thanks to “their industry-leading design platform, productization skills, and proven 7-nm IPs.”Wave’s current-generation DPU based on 16-nm process node was designed by Wave’s employees with the help of contractors. As for the 7-nm DPU, Meyer said, “Between Broadcom and Wave, we have sketched out skills and resources that will be necessary to both front-end and back-end [of the ASIC] designs. We devised our plans for collaboration accordingly.”The joint 7-nm project has been up and running for several months. Broadcom will manage physical delivery of the 7-nm chip. Despite the complexity of 7-nm designs, Meyer said, “I am confident that Broadcom will deliver the first-time right chip.” Wave, however, declined to comment on when its 7-nm DPU will become available.What’s in the 7-nm DPU?Wave did not reveal the architecture of its 7-nm DPU, either.Meyer, however, explained that the new chip will be “based on the data flow architecture.” It will be the first DPU featuring “64-bit MIPS multithreaded CPU.” Wave acquired MIPS in June.Meyer also indicated that Wave’s 7-nm chip will come with “new features in memory,” but he refrained from disclosing what exactly those features are.MIPS’s multithreading technology will play a key role in the new-generation DPU, according to Meyer. In Wave’s dataflow processing, “when we load, unload, and reload data for machine-learning agents, hardware multithreading architecture is effective.” MIPS’s cache coherence is another positive for Wave’s new DPU. “Because our DPU is 64-bit, it only makes sense that both MIPS and DPU talk to the same memory in 64-bit address space,” he said.Asked about Wave’s new features in memory, Krewell said, “Wave’s present chip uses Micron’s Hybrid Memory Cube. And I believe Wave will move to high-bandwidth memory (HBM) in future chips.” He added, “There’s a much better roadmap for HBM. The changing memory architecture will have an impact on the overall system architecture.”Karl Freund, senior analyst at Moor Insights & Strategy, concurred. He said, “For memory, I suspect they will abandon the Hybrid Memory Cube and adopt high-bandwidth memory, which is more cost-effective.”During the interview, Meyer boasted that the new 7-nm DPU should be able to offer 10 times the performance of the company’s current chip.“Remember, we separated the clocks from our chips” in the DPU architecture, he said. Noting that going back and forth to a host creates a bottleneck, he explained that in DPU, an embedded microcontroller loads instructions, cutting down on power and latency wasted by traditional accelerators. “We can take advantage of that capacity available for transistors on the 7-nm chip to increase the performance.”Krewell remained a little skeptical. “As to whether Wave can make a 10x leap, that’s a long reach.” He said, “It depends on how machine-learning performance is measured … and whether Derek [Meyer] was talking training or inference.” He added, “There are a lot of changes going on in inference, with lower-precision (8-bit and below) algorithms being deployed. Training performance is heavily memory-architecture- dependent.”He acknowledged, “But I don’t know the details of what Wave has planned.”
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Release time：2018-08-02 00:00 reading：2839 Continue reading>>
Qualcomm delivers breakthrough 5G NR mm<span style='color:red'>Wave</span> and Sub-6 GHz RF module
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Qualcomm delivers breakthrough 5G NR mmWave and Sub-6 GHz RF module

Qualcomm Technologies has unveiled the world’s first fully-integrated 5G NR millimeter wave (mmWave) and sub-6 GHz RF modules for smartphones and other mobile devices.The QTM052 mmWave antenna module family and the QPM56xx sub-6 GHz RF module family pair with Qualcomm's Snapdragon X50 5G modem to deliver modem-to-antenna capabilities across several spectrum bands, in a very compact footprint that is intended for integration in mobile devices. “This announcement concerning the first commercial 5G NR mmWave antenna modules and sub-6 GHz RF modules for smartphones and other mobile devices represents a major milestone for the mobile industry. Qualcomm's early investment in 5G has allowed us to deliver a working mobile mmWave solution that was previously thought unattainable, as well as a fully-integrated sub-6 GHz RF solution. Now, these type of modem-to-antenna solutions, spanning both mmWave and sub-6 spectrum bands, make mobile 5G networks and devices, ready for large scale commercialisation,” said Cristiano Amon, President, Qualcomm. To date, mmWave signals have not been used for mobile wireless communications due to the technical and design challenges they pose, all of which impact nearly every aspect of device engineering, including materials, form-factor, industrial design, thermals, and regulatory requirements for radiated power. As such, many in the mobile industry considered mmWave highly impractical for mobile devices and networks, and thus unlikely to materialise. The QTM052 mmWave antenna modules work in tandem with the Snapdragon X50 5G modem, as a comprehensive system, to help overcome the formidable challenges associated with mmWave. They support advanced beam forming, beam steering, and beam tracking technologies, improving the range and reliability of mmWave signals. They feature an integrated 5G NR radio transceiver, power management IC, RF front-end components and phased antenna array.They support up to 800 MHz of bandwidth in the 26.5-29.5 GHz (n257), as well as the entire 27.5-28.35 GHz (n261) and 37-40 GHz (n260) mmWave bands. Most importantly, the QTM052 modules integrate all these capabilities in a very compact footprint, such that up to four of them can be integrated in a smartphone. This allows OEMs to continue evolving the industrial design of their mobile devices, offering attractive form factors combined with the benefits of extremely high speeds from mmWave 5G NR, and making such devices available for launch as early as 2019. While mmWave is best suited for providing 5G coverage in dense urban areas and crowded indoor environments, broad 5G NR coverage will be achieved in sub-6 GHz spectrum bands. As such, the QPM56xx RF module family (including the QPM5650, QPM5651, QDM5650, and QDM5652) is designed to allow smartphones based on the Snapdragon X50 5G modem to support 5G NR in sub-6 GHz RF bands.The QPM5650 and QPM5651 feature integrated 5G NR PA/LNA/Switch and filtering subsystem. The QDM5650 and QDM5652 feature integrated 5G NR LNA/switch and filtering subsystem for diversity and MIMO support.All four modules offer integrated SRS switching required for optimum massive MIMO applications and support for 3.3-4.2 GHz (n77), 3.3-3.8 GHz (n78) and 4.4-5.0 GHz (n79) sub-6 bands. These sub-6 GHz RF modules provide mobile device makers with a viable path to delivering on the promise of 5G NR massive MIMO technology in mobile devices.Both the QTM052 mmWave antenna module family and the QPM56xx sub-6 GHz RF module family are now sampling to customers. 
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Release time：2018-07-24 00:00 reading：936 Continue reading>>

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