2017上海慕尼黑电子展ROHM专区(一)

Release time:2017-03-14
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source:ROHM
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2017年3月14日-16日,全球知名半导体制造商ROHM亮相在上海新国际博览中心举办的"2017慕尼黑上海电子展(electronica China 2017)"。

"慕尼黑上海电子展"不仅是亚洲领先的电子行业展览,而且还是行业内最重要的盛会之一。作为拥有近60年历史的综合性半导体制造商,ROHM在本次展会上推出了包括"汽车电子"、"传感器"、 "模拟"、"电源"和"移动设备"等在内的5大解决方案展区。在为期3天的展会期间,ROHM凭借业界领先的技术、强势多元化的产品、种类丰富的应用解决方案、以及简明易懂的应用案例,吸引了众多业内外人士驻足交流。

ROHM展台人头攒动

ROHM展台人头攒动


5大解决方案备受关注

5大解决方案备受关注


ROHM技术人员现场答疑

ROHM技术人员现场答疑


应用案例阵容强大

应用案例阵容强大


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ROHM SiC Power MOSFETs

SiC Power MOSFETsROHM’s SiC MOSFETs feature low ON resistance and low switching lossROHM’s silicon carbide (SiC) MOSFETs are available in a range of current ratings and packages. They come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V. Unlike IGBTs there is no tail current during turn-off resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the ON resistance remains relatively constant even at high temperatures, minimizing conduction losses. Both 2nd generation planar with maximum short-circuit withstand time and 3rd generation trench with reduced input capacitance and lower gate charge models are offered. Bare dies up to 1,700 V are also available.FeaturesFast switching with low lossMaximum junction temperature: +175°CPackaged devices rated at 650 V, 1,200 V, or 1,700 VON resistance from 17 mΩ to 1,150 mΩSpice model and thermal model available2nd gen planar technology with longer short-circuit withstand timeNo limitations on the use of the body diode3rd gen trench technology with low input capacitance (CISS) and low gate charge (QG)DC blocking voltage: 650 V, 1,200 V, 1,700 VMinimal switching lossesOperating temperature range: -40°C to +175°CApplicationsInverters for induction heatingMotor drive invertersBidirectional convertersSolar invertersPower conditioners3rd Generation TO-247-4L Package with Kelvin Source Connection(NEW)ImageManufacturerPart NumberDescriptionAvailableQuantityView DetailsSCT3040KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3080KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3105KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3030ARC14650V NCH SIC TRENCH MOSFET IN 4P0View DetailsSCT3060ARC14650V NCH SIC TRENCH MOSFET IN 4P30View DetailsSCT3080ARC14650V NCH SIC TRENCH MOSFET IN 4P0View DetailsSiC Power MOSFETs SingleImageManufacturerPart NumberDescriptionAvailableQuantityView DetailsSCT2080KECUMOSFET N-CH 1200V 40A TO-24720View DetailsSCT2120AFCUMOSFET N-CH 650V 29A TO-220AB10View DetailsSCT2280KECUMOSFET N-CH 1200V 14A TO-24722View DetailsSCT2450KECUMOSFET N-CH 1200V 10A TO-24717View DetailsSCT2H12NZGC11MOSFET N-CH 1700V 3.7A TO-3PFM55View DetailsSiC Power MOSFETs ArraysImageManufacturerPart NumberDescriptionAvailablQuantityView DetailsBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE4View DetailsBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE8View DetailsBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE22View DetailsBSM180D12P2C101MOSFET 2N-CH 1200V 180A MODULE10View Details
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