| RS1E200GNTB | ||
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| 产品描述：
MOSFET N-CH 30V 20A 8-HSOP
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| 标准包装：2500 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| Rds On (Max) @ Id, Vgs | 4.6 mOhm @ 20A, 10V |
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| Power - Max | 3W |
| Supplier Device Package | 8-HSOP |
| Gate Charge (Qg) @ Vgs | 16.8nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | N-Channel |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Power Dissipation (Max) | 3W (Ta), 25.1W (Tc) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Package / Case | 8-PowerTDFN |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1080pF @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| RoHS | Lead free / RoHS Compliant |
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