| R6012ANJTL | ||
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| 产品描述：
MOSFET N-CH 10V DRIVE LPTS
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| 标准包装：1000 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Rds On (Max) @ Id, Vgs | 420 mOhm @ 6A, 10V |
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| Power - Max | 100W |
| Supplier Device Package | LPTS |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Packaging | Tape & Reel (TR) |
| Family | FETs - Single |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Packaging | Tape & Reel (TR) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Drain to Source Voltage (Vdss) | 600V |
| Standard Package | 1,000 |
| Current - Continuous Drain (Id) @ 25掳C | 12A (Ta) |
| FET Type | N-Channel |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Power Dissipation (Max) | 100W (Tc) |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| 数据手册： |
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