| RGTH40TS65GC11 | ||
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| 产品描述：
IGBT 650V 40A 144W TO-247N
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| 标准包装：450 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Collector-Emitter Saturation Voltage: | 1.6 V |
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| Continuous Collector Current Ic Max: | 40 A |
| Manufacturer: | ROHM Semiconductor |
| Pd - Power Dissipation: | 144 W |
| Continuous Collector Current at 25 C: | 40 A |
| Factory Pack Quantity: | 450 |
| RoHS: | Details |
| Gate-Emitter Leakage Current: | +/- 200 nA |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Mounting Style: | Through Hole |
| Maximum Operating Temperature: | + 175 C |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Supplier Device Package | TO-247N |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Manufacturer | Rohm Semiconductor |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Packaging: | Tube |
| Continuous Collector Current: | 20 A |
| Series: | RGTH40TS65 |
| Operating Temperature Range: | - 40 C to + 175 C |
| Minimum Operating Temperature: | - 40 C |
| Brand: | ROHM Semiconductor |
| Package / Case: | TO-247-3 |
| Product Category: | IGBT Transistors |
| Unit Weight: | 1.340411 oz |
| Maximum Gate Emitter Voltage: | +/- 30 V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Test Condition | 400V, 20A, 10 Ohm, 15V |
| Categories | Discrete Semiconductor Products -> Transistors - IGBTs - Single |
| Td (on/off) @ 25°C | 22ns/73ns |
| Current - Collector Pulsed (Icm) | 80A |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| IGBT Type | Trench Field Stop |
| RoHS | Lead free / RoHS Compliant |
| 数据手册： |
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