RGT30NS65DGTL
  • 1 (Unlimited)
  • 不建议用于新设计
  • LPDS (TO-263S)
产品描述:
IGBT 650V 30A 133W TO-263S
标准包装:1
数据手册:
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Current - Collector Pulsed (Icm) 45A
Power - Max 133W
IGBT Type Trench Field Stop
Td (on/off) @ 25°C 18ns/64ns
Part Status Active
Manufacturer Rohm Semiconductor
Gate Charge 32nC
Family Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Operating Temperature -40°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test Condition 400V, 15A, 10 Ohm, 15V
Supplier Device Package LPDS (TO-263S)
Current - Collector (Ic) (Max) 30A
Category Discrete Semiconductor Products
Reverse Recovery Time (trr) 55ns
Voltage - Collector Emitter Breakdown (Max) 650V
Mounting Type Surface Mount
Input Type Standard
Lead Free Status / RoHS Status 1
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