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| 产品描述：
800V，650mΩ，10A，N沟道功率MOSFET
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
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| FET Feature | Standard |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Part Status | Active |
| Manufacturer | Fairchild Semiconductor |
| Series | SuperFET® II |
| Vgs(th) (Max) @ Id | 4.5V @ 800µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tube |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 4A, 10V |
| Power - Max | 30.5W |
| Supplier Device Package | TO-220F |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 1565pF @ 100V |
| 数据手册： |
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