SCT2H12NZGC11
  • 1 (Unlimited)
  • ACTIVE
  • TO-3PFM, SC-93-3
  • EAR99
Product description : SCT2H12NZ Series 1700 V 3.7 A 1.5 Ohm N-Channel SiC Power Mosfet - TO-3PFM
SPQ:30
Datasheet :
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Product: Power MOSFETs
Rds On - Drain-Source Resistance: 1.5 Ohms
Minimum Operating Temperature: - 55 C
Technology: SiC
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Vgs - Gate-Source Voltage: - 6 V to + 22 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 16 ns
Manufacturer: ROHM Semiconductor
Factory Pack Quantity: 30
Brand: ROHM Semiconductor
Typical Turn-Off Delay Time: 35 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 1700 V
Type: N-Channel SiC Power MOSFET
ECCN EAR99
Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
Supplier Device Package TO-3PFM
Power Dissipation (Max) 35W (Tc)
Packaging Tube
Vgs (Max) +22V, -6V
Drive Voltage (Max Rds On, Min Rds On) 18V
RoHS Lead free / RoHS Compliant
Packaging: Tube
Qg - Gate Charge: 14 nC
Pd - Power Dissipation: 35 W
Package / Case: TO-3PFM
Configuration: Single
Mounting Style: Through Hole
Fall Time: 74 ns
Forward Transconductance - Min: 0.4 S
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: SCT2H12NZG
RoHS:  Details
Id - Continuous Drain Current: 3.7 A
Rise Time: 21 ns
Maximum Operating Temperature: + 175 C
Operating Temperature 175°C (TJ)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V
Vgs(th) (Max) @ Id 4V @ 900µA
Drain to Source Voltage (Vdss) 1700V
Package / Case TO-3PFM, SC-93-3
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Lead Free Status / RoHS Status 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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