| R8002ANX | ||
|---|---|---|
|
|
||
|
||
| 产品描述：
MOSFET N-CH 800V 2A TO-220FM
|
||
| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
|
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Package / Case | TO-220-3 Full Pack |
|---|---|
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Part Status | Active |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 210pF @ 25V |
| Rds On (Max) @ Id, Vgs | 4.3 Ohm @ 1A, 10V |
| Power - Max | 35W |
| Supplier Device Package | TO-220FM |
| Gate Charge (Qg) @ Vgs | 12.7nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Packaging | Bulk |
| 数据手册： |
|---|
登录之后就可发表评论
