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| 产品描述： | ||
| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rds On (Max) @ Id, Vgs | 480 mOhm @ 3.9A, 10V |
| Supplier Device Package | D-Pak |
| Series | HEXFET® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Manufacturer | Infineon Technologies |
| Part Status | Active |
| Vgs (Max) | ±20V |
| Categories | Discrete Semiconductor Products |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Mounting Type | Surface Mount |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 100V |
| Power Dissipation (Max) | 40W (Tc) |
| Technology | MOSFET (Metal Oxide) |
| Packaging | Tape & Reel (TR) |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
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