Width: | 6.22 mm |
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Rds On - Drain-Source Resistance: | 1.7 Ohms |
Pd - Power Dissipation: | 110 W |
Package / Case: | TO-252-3 |
Configuration: | Single |
Unit Weight: | 0.050717 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 8.7 ns |
Manufacturer: | Vishay |
Factory Pack Quantity: | 3000 |
Brand: | Vishay Semiconductors |
RoHS: | Details |
Id - Continuous Drain Current: | 5 A |
Rise Time: | 27 ns |
Maximum Operating Temperature: | + 150 C |
Packaging: | Tube |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Height: | 2.39 mm |
Vgs - Gate-Source Voltage: | 30 V |
Mounting Style: | SMD/SMT |
Fall Time: | 16 ns |
Length: | 6.73 mm |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Typical Turn-Off Delay Time: | 17 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
数据手册: |
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