| FCU900N60Z | ||
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| 产品描述：
FCU900N60Z , N沟道 MOSFET 晶体管, 4.5 A, Vds=600 V, 3针 IPAK封装
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| 标准包装：1 | ||
| 数据手册： | ||
| ECAD模型:
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- 规格参数
- 产品特性
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| Rds On - Drain-Source Resistance: | 900 mOhms |
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| Product: | MOSFET |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 11.9 ns |
| Forward Transconductance - Min: | 4.6 S |
| Series: | SuperFETr II |
| Factory Pack Quantity: | 1800 |
| Typical Turn-Off Delay Time: | 33.6 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 675 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Bulk |
| Qg - Gate Charge: | 13 nC |
| Pd - Power Dissipation: | 52 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.019013 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 10.9 ns |
| Manufacturer: | Fairchild Semiconductor |
| Transistor Polarity: | N-Channel |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 4.5 A |
| Rise Time: | 5.3 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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