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| 产品描述：
Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 230mA (Ta) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Vgs(th) (Max) @ Id | 1.4V @ 26µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Digi-Reel® |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 230mA, 10V |
| Power - Max | 360mW |
| Supplier Device Package | PG-SOT23-3 |
| Gate Charge (Qg) @ Vgs | 1.4nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 41pF @ 25V |
| ECCN | EAR99 |
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