STB25N80K5 specifications -Ameya360 electronic components purchase network


STB25N80K5

ACTIVE EAR99
Product description : N-Channel 800 V 0.26 Ohm Surface Mount SUPERMesh™5 Power Mosfet - D2PAK
SPQ：1
Datasheet : STB25N80K5.pdf

Qg - Gate Charge:	40 nC
Packaging:	Reel
Manufacturer:	STMicroelectronics
Pd - Power Dissipation:	250 W
Transistor Polarity:	N-Channel
Factory Pack Quantity:	1000
Brand:	STMicroelectronics
Package / Case:	TO-252-3
Id - Continuous Drain Current:	19.5 A
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	30 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	260 mOhms
Number of Channels:	1 Channel
Series:	MDmesh K5
Minimum Operating Temperature:	- 55 C
Channel Mode:	Enhancement
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vgs th - Gate-Source Threshold Voltage:	4 V
Configuration:	Single
Unit Weight:	0.139332 oz
Mounting Style:	SMD/SMT
ECCN	EAR99

Datasheet： STB25N80K5.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	99524
Mfg name :	STMicroelectronics
MPN :	STB25N80K5
Product description :	N-Channel 800 V 0.26 Ohm Surface Mount SUPERMesh™5 Power Mosfet - D2PAK

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：