IRLB3036PBF
  • ACTIVE
  • TO-220AB
Product description : Single N-Channel 60 V 2.4 mOhm 91 nC HEXFET® Power Mosfet - TO-220-3
SPQ:1
Datasheet :
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FET Feature Logic Level Gate
Package / Case TO-220-3
Power - Max 380W
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 140nC @ 4.5V
FET Type MOSFET N-Channel, Metal Oxide
Online Catalog N-Channel Logic Level Gate FETs
Family FETs - Single
Vgs(th) (Max) @ Id 2.5V @ 250µA
Packaging Tube  
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 165A, 10V
PCN Assembly/Origin Mosfet Backend Wafer Processing 23/Oct/2013 Additional Assembly Site 13/Jun/2014
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Design Resources IRLB3036PBF Saber Model IRLB3036PBF Spice Model
Series HEXFET®
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 11210pF @ 50V
RoHS Lead free / RoHS Compliant
Datasheet:
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