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| Product description : Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Power - Max | 1.3W |
|---|---|
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 780mA, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Part Status | Active |
| Manufacturer | Vishay Siliconix |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) @ Vds | 360pF @ 25V |
| ECCN | EAR99 |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| FET Feature | Standard |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Packaging | Tube |
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