| IPP60R190C6XKSA1 | ||
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| 产品描述：
Single N-Channel 600V 190 mOhm 63 nC CoolMOS™ Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： -- |
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| Packaging: | Tube |
|---|---|
| Qg - Gate Charge: | 63 nC |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 15 ns |
| Series: | XPP60R190 |
| Factory Pack Quantity: | 500 |
| Part # Aliases: | IPP60R190C6 IPP60R190C6XK SP000621158 |
| Typical Turn-Off Delay Time: | 110 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 170 mOhms |
| Pd - Power Dissipation: | 151 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 9 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 20.2 A |
| Rise Time: | 11 ns |
| ECCN | EAR99 |
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