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| 产品描述：
P-Channel 30 V 0.03 Ω 2.7 W SMT STripFET VI DeepGATE Power Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| FET Feature | Standard |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Part Status | Active |
| Manufacturer | STMicroelectronics |
| Series | DeepGATE™, STripFET™ VI |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Operating Temperature | 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 3A, 10V |
| Power - Max | 2.7W |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 1450pF @ 24V |
| ECCN | EAR99 |
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