IRLS4030PBF specifications -Ameya360 electronic components purchase network


IRLS4030PBF

ACTIVE EAR99
Product description : Single N-Channel 100 V 4.3 mOhm 87 nC HEXFET® Power Mosfet - D2PAK
SPQ：50
Datasheet : IRLS4030PBF.pdf

Qg - Gate Charge:	87 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	100 V
Unit Weight:	0.139332 oz
Mounting Style:	SMD/SMT
Rds On - Drain-Source Resistance:	4.5 mOhms
Number of Channels:	1 Channel
Pd - Power Dissipation:	370 W
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-252-3
Id - Continuous Drain Current:	180 A
Vgs - Gate-Source Voltage:	16 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRLS4030PBF.pdf

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Stock code :	96412
Mfg name :	Infineon Technologies
MPN :	IRLS4030PBF
Product description :	Single N-Channel 100 V 4.3 mOhm 87 nC HEXFET® Power Mosfet - D2PAK

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