SI4925BDY-T1-E3
SI4925BDY-T1-E3
  • ACTIVE
  • EAR99
Product description : Dual P-Channel 30 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8
SPQ:1
Datasheet :
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Minimum Operating Temperature: - 55 C
Packaging: Reel
Pd - Power Dissipation: 1.1 W
Tradename: TrenchFET
Height: 1.55 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 34 ns
Length: 5 mm
Series: SI4
Factory Pack Quantity: 2500
Brand: Vishay Semiconductors
Typical Turn-Off Delay Time: 60 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: - 30 V
Transistor Type: 2 P-Channel
ECCN EAR99
Rds On - Drain-Source Resistance: 25 mOhms
Width: 4 mm
Technology: Si
Package / Case: SOIC-8
Configuration: Dual
Unit Weight: 0.006596 oz
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 9 ns
Manufacturer: Vishay
Transistor Polarity: P-Channel
Channel Mode: Enhancement
Part # Aliases: SI4925BDY-T1
RoHS:  Details
Id - Continuous Drain Current: 5.3 A
Rise Time: 12 ns
Maximum Operating Temperature: + 150 C
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Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock10000Update On
2025-07-22
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SPQ/MOQ1/1
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.94271

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stock10000Update On
2024-04-22
Lead-Time0Weeks
Supplier SPQ/MOQ1/2500
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