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| 产品描述：
BCR22PN Series NPN/PNP 50 V 100 mA Silicon Digital Transistor Array - SOT-363-6
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| 标准包装：3000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
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| Resistor - Base (R1) (Ohms) | 22k |
| Power - Max | 250mW |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| Current - Collector (Ic) (Max) | 100mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Frequency - Transition | 130MHz |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | PG-SOT363-6 |
| Part Status | Last Time Buy |
| Manufacturer | Infineon Technologies |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V |
| ECCN | EAR99 |
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