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| Product description : Single P-Channel 100 V 1.45 Ohm 3.5 nC 806 mW Silicon SMT Mosfet - SOT-23 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| FET Feature | Standard |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Part Status | Active |
| Manufacturer | Diodes Incorporated |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 141pF @ 50V |
| ECCN | EAR99 |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 600mA, 10V |
| Power - Max | 625mW |
| Supplier Device Package | SOT-23 |
| Gate Charge (Qg) @ Vgs | 1.8nC @ 5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Tape & Reel (TR) |
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