| BSC123N08NS3GATMA1 | ||
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| 产品描述：
Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
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| Width: | 6.35 mm |
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| Rds On - Drain-Source Resistance: | 12.3 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TDSON-8 |
| Height: | 1.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 12 ns |
| Forward Transconductance - Min: | 44 S |
| Series: | BSC123N08 |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 19 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Reel |
| Qg - Gate Charge: | 19 nC |
| Pd - Power Dissipation: | 66 W |
| Tradename: | OptiMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 4 ns |
| Length: | 6.35 mm |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSC123N08NS3 BSC123N08NS3GXT G SP000443916 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 55 A |
| Rise Time: | 18 ns |
| Maximum Operating Temperature: | + 150 C |
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Availability3Request Stock Notification
Supplier Stock
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
| stock | 102 | Update On 2025-06-03 |
|---|---|---|
| Lead-Time | -- | |
| SPQ/MOQ | 1/1 | |
| Location | -- | |
| DateCode | -- |
Supplier Code:SP1027
Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them
$0.97015
￥8.05772
| stock | 65000 | Update On 2023-04-24 |
|---|---|---|
| Lead-Time | 0Weeks | |
| Supplier SPQ/MOQ | 1/5000 | |
| Location | -- | |
| DateCode | 2309 |
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