| IPW60R070C6FKSA1 | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
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| 标准包装：1 | ||
| 数据手册： -- |
- 规格参数
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| Width: | 5.21 mm |
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| Rds On - Drain-Source Resistance: | 63 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-247-3 |
| Height: | 21.1 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 5 ns |
| Length: | 16.13 mm |
| Series: | XPW60R070 |
| Factory Pack Quantity: | 240 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 83 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 170 nC |
| Pd - Power Dissipation: | 391 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Configuration: | Single |
| Unit Weight: | 1.340411 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 16 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPW60R070C6 IPW60R070C6XK SP000645060 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 53 A |
| Rise Time: | 12 ns |
| Maximum Operating Temperature: | + 150 C |
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