BSZ060NE2LSATMA1 specifications -Ameya360 electronic components purchase network


BSZ060NE2LSATMA1

ACTIVE EAR99
Product description : Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8
SPQ：1
Datasheet : BSZ060NE2LSATMA1.pdf

Packaging:	Reel
Qg - Gate Charge:	5.9 nC
Pd - Power Dissipation:	26 W
Tradename:	OptiMOS
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Vgs - Gate-Source Voltage:	+/- 20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	2.5 ns
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Part # Aliases:	BSZ060NE2LS BSZ060NE2LSXT SP000776122
RoHS:	Details
Id - Continuous Drain Current:	40 A
Rise Time:	2.2 ns
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	5 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TSDSON-8
Configuration:	1 N-Channel
Mounting Style:	SMD/SMT
Fall Time:	1.8 nS
Forward Transconductance - Min:	34 S
Series:	BSZ060NE2
Factory Pack Quantity:	5000
Brand:	Infineon Technologies
Typical Turn-Off Delay Time:	11 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	25 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： BSZ060NE2LSATMA1.pdf

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Stock code :	948665
Mfg name :	Infineon Technologies
MPN :	BSZ060NE2LSATMA1
Product description :	Single N-Channel 25 V 6 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8

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