BSS316NH6327XTSA1
BSS316NH6327XTSA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 30 V 160 mOhm 0.6 nC OptiMOS™ Small Signal Mosfet - SOT-23
SPQ：1
Datasheet :
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Width: 1.3 mm
Rds On - Drain-Source Resistance: 119 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1.6 V
Configuration: Single
Unit Weight: 0.050717 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 3.4 ns
Forward Transconductance - Min: 2.3 S
Series: BSS316
Factory Pack Quantity: 3000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 5.8 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 600 pC
Pd - Power Dissipation: 500 mW
Package / Case: SOT-23-3
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 1 ns
Length: 2.9 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSS316N BSS316NH6327XT H6327 SP000928948
RoHS:  Details
Id - Continuous Drain Current: 1.4 A
Rise Time: 2.3 ns
Maximum Operating Temperature: + 150 C
Datasheet：
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