| IRFS38N20DTRRP | ||
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| 产品描述：
D2PAK 3/200V SINGLE N-CHANNEL HEXFET POWER MOSFET
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| 标准包装：800 | ||
| 数据手册： |
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| Width: | 9.65 mm |
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| Rds On - Drain-Source Resistance: | 54 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 16 ns |
| Forward Transconductance - Min: | 17 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 29 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Transistor Type: | 1 N-Channel |
| Packaging: | Reel |
| Qg - Gate Charge: | 60 nC |
| Pd - Power Dissipation: | 3.8 W |
| Package / Case: | TO-252-3 |
| Height: | 4.83 mm |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 47 ns |
| Length: | 10.67 mm |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 800 |
| Brand: | Infineon / IR |
| RoHS: | Details |
| Id - Continuous Drain Current: | 44 A |
| Rise Time: | 95 ns |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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