IXTX110N20L2 specifications -Ameya360 electronic components purchase network


IXTX110N20L2

ACTIVE EAR99
Product description : Single N-Channel 200 V 24 mOhm 960 W Power Mosfet - PLUS247
SPQ：1
Datasheet : IXTX110N20L2.pdf

Width:	5.21 mm
Rds On - Drain-Source Resistance:	24 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Package / Case:	TO-247-3
Height:	21.34 mm
Unit Weight:	0.257500 oz
Fall Time:	135 ns
Length:	16.13 mm
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	33 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	200 V
Type:	LinearL2 Power MOSFET
ECCN	EAR99
Packaging:	Tube
Qg - Gate Charge:	500 nC
Pd - Power Dissipation:	960 W
Tradename:	LinearL2
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Vgs - Gate-Source Voltage:	20 V
Mounting Style:	Through Hole
Typical Turn-On Delay Time:	40 ns
Forward Transconductance - Min:	55 S
Series:	IXTX110N20
Factory Pack Quantity:	30
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	110 A
Rise Time:	100 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTX110N20L2.pdf

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Stock code :	941537
Mfg name :	IXYS Corporation
MPN :	IXTX110N20L2
Product description :	Single N-Channel 200 V 24 mOhm 960 W Power Mosfet - PLUS247

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