| IXTK120P20T | ||
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| 产品描述：
N-Channel 200 V 30 mOhm Through Hole Power Mosfet - TO-264
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| 标准包装：25 | ||
| 数据手册： |
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| Width: | 5.31 mm |
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| Rds On - Drain-Source Resistance: | 30 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-264-3 |
| Height: | 26.59 mm |
| Unit Weight: | 0.264555 oz |
| Fall Time: | 50 ns |
| Length: | 20.29 mm |
| Manufacturer: | IXYS |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 200 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 200 V |
| Type: | TrenchP Power MOSFET |
| ECCN | EAR99 |
| Packaging: | Tube |
| Qg - Gate Charge: | 740 nC |
| Pd - Power Dissipation: | 1.04 kW |
| Tradename: | TrenchP |
| Vgs th - Gate-Source Threshold Voltage: | - 4.5 V |
| Vgs - Gate-Source Voltage: | 15 V |
| Mounting Style: | Through Hole |
| Typical Turn-On Delay Time: | 90 ns |
| Forward Transconductance - Min: | 85 S |
| Series: | IXTK120P20 |
| Factory Pack Quantity: | 25 |
| Brand: | IXYS |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 120 A |
| Rise Time: | 85 ns |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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