| DMN3016LFDE-7 | ||
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| 产品描述：
N-Channel 30 V 12 mΩ 25.1 nC SMT Enhancement Mode Mosfet - UDFN2020-6
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| 标准包装：3000 | ||
| 数据手册： |
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| Product: | Enhancement Mode MOSFET |
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| Packaging: | Reel |
| Qg - Gate Charge: | 25.1 nC |
| Pd - Power Dissipation: | 2.02 W |
| Package / Case: | UDFN2020-6 |
| Height: | 0.6 mm |
| Vgs - Gate-Source Voltage: | +/- 20 V, +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 4.8 ns |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 26.1 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Type: | Enhancement Mode MOSFET |
| Maximum Operating Temperature: | + 150 C |
| Width: | 2 mm |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 5.6 ns |
| Length: | 2 mm |
| Series: | DMN3016 |
| Factory Pack Quantity: | 3000 |
| Brand: | Diodes Incorporated |
| RoHS: | Details |
| Id - Continuous Drain Current: | 10 A |
| Rise Time: | 16.5 ns |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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