Emitter- Base Voltage VEBO: | 5 V |
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Collector-Emitter Saturation Voltage: | 1.6 V |
Collector- Base Voltage VCBO: | 60 V |
Manufacturer: | Central Semiconductor |
Pd - Power Dissipation: | 2 W |
Transistor Polarity: | PNP |
Technology: | Si |
RoHS: | Details |
Product Category: | Bipolar Transistors - BJT |
Gain Bandwidth Product fT: | 200 MHz |
Mounting Style: | Through Hole |
ECCN | EAR99 |
Maximum DC Collector Current: | 600 mA |
Packaging: | Tube |
DC Collector/Base Gain hfe Min: | 50 at 300 mA at 10 V |
Series: | MPQ29 |
Minimum Operating Temperature: | - 65 C |
Factory Pack Quantity: | 25 |
Brand: | Central Semiconductor |
Package / Case: | TO-116-14 |
Collector- Emitter Voltage VCEO Max: | 60 V |
Configuration: | Quad |
Maximum Operating Temperature: | + 150 C |
数据手册: |
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