| RS1E240GNTB | ||
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| 产品描述：
MOSFET N-CH 30V 24A 8-HSOP
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| 标准包装：2500 | ||
| 数据手册： | ||
| ECAD模型:
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| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 23 nC |
| Pd - Power Dissipation: | 3 W |
| Package / Case: | HSOP-8 |
| Configuration: | Single |
| Unit Weight: | 0.002490 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 16.3 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 24 A |
| Rise Time: | 7.8 ns |
| Maximum Operating Temperature: | + 150 C |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 24A, 10V |
| Supplier Device Package | 8-HSOP |
| Power Dissipation (Max) | 3W (Ta), 27.4W (Tc) |
| Packaging | Cut Tape (CT) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| RoHS | Lead free / RoHS Compliant |
| Rds On - Drain-Source Resistance: | 3.3 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 11.5 ns |
| Forward Transconductance - Min: | 21.5 S |
| Series: | RS1E240GN |
| Factory Pack Quantity: | 2500 |
| Typical Turn-Off Delay Time: | 47 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V |
| Package / Case | 8-PowerTDFN |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Lead Free Status / RoHS Status | 1 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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