BFU520YX
  • ACTIVE
  • EAR99
Product description : 12 V 30 mA 10 GHz 19 dB Dual NPN Wideband Silicon RF Transistor - SOT363-6
SPQ:1
Datasheet :
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Operating Frequency: 900 MHz
Packaging: Reel
Operating Temperature Range: - 40 C to + 150 C
Technology: Si
Gain Bandwidth Product fT: 10 GHz
Mounting Style: SMD/SMT
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 5 mA
Manufacturer: NXP
Transistor Polarity: NPN
Brand: NXP Semiconductors
Product Category: RF Bipolar Transistors
Type: Wideband RF Transistor
Maximum Operating Temperature: + 150 C
Collector- Base Voltage VCBO: 24 V
Minimum Operating Temperature: - 40 C
Pd - Power Dissipation: 450 mW
Package / Case: SOT363-6
Configuration: Dual
Maximum DC Collector Current: 50 mA
DC Current Gain hFE Max: 200
DC Collector/Base Gain hfe Min: 60
Series: NPI Part Build_RF Transistors
Factory Pack Quantity: 3000
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 16 V
Transistor Type: Bipolar Wideband
ECCN EAR99
Datasheet:
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