| RQ3E150GNTB | ||
|---|---|---|
|
|
||
|
||
| Product description : http://www.ameya360.com/product/916941 | ||
| SPQ：3000 | ||
| Datasheet : |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 15.3 nC |
| Pd - Power Dissipation: | 2 W |
| Package / Case: | HSMT-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 7.8 ns |
| Forward Transconductance - Min: | 13.5 S |
| Series: | RQ3E150TB |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 34.4 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Rds On - Drain-Source Resistance: | 6.1 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 11.6 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | N-Channel |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 15 A |
| Rise Time: | 5.8 ns |
| Maximum Operating Temperature: | + 150 C |
You can comment after logging in.
Please enter the verification code in the image below：