| NTR5105PT1G | ||
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| 产品描述：
-60V,-211mA,5Ω,P-Ch Small Signal MOSFET
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| 标准包装：1 | ||
| 数据手册： |
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| Packaging: | Reel |
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| Qg - Gate Charge: | 1 nC |
| Pd - Power Dissipation: | 347 mW |
| Package / Case: | SOT-23-3 |
| Configuration: | 1 P-Channel |
| Mounting Style: | SMD/SMT |
| Fall Time: | 12.8 ns |
| Forward Transconductance - Min: | 227 mS |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 8.8 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 60 V |
| Transistor Type: | 1 P-Channel |
| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | - 3 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 5.8 ns |
| Manufacturer: | ON Semiconductor |
| Factory Pack Quantity: | 3000 |
| Brand: | ON Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | - 196 mA |
| Rise Time: | 4 ns |
| Maximum Operating Temperature: | + 150 C |
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