| SI1035X-T1-GE3 | ||
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| 产品描述：
Si1035X Series N and P-Channel 20 V 5 Ohm 250 mW SMT Power Mosfet - SC-89-6
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Product: | MOSFET Small Signal |
| Technology: | Si |
| Package / Case: | SC-89-6 |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Unit Weight: | 0.001129 oz |
| Number of Channels: | 2 Channel |
| Manufacturer: | Vishay |
| Transistor Polarity: | N-Channel, P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI1035X-GE3 |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 8 Ohms |
| Width: | 1.2 mm |
| Pd - Power Dissipation: | 250 mW |
| Tradename: | TrenchFET |
| Height: | 0.6 mm |
| Vgs - Gate-Source Voltage: | 5 V |
| Mounting Style: | SMD/SMT |
| Length: | 1.7 mm |
| Series: | SI1 |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 180 mA |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
| 数据手册： |
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