| KSC5603DTU | ||
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| 产品描述：
KSC5603D Series 800 V 3 A Through Hole NPN Silicon Transistor - TO-220-3
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| 标准包装：1 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 0.5 V |
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| Collector- Base Voltage VCBO: | 1.6 kV |
| Minimum Operating Temperature: | - 65 C |
| Package / Case: | TO-220-3 |
| Gain Bandwidth Product fT: | 5 MHz |
| Unit Weight: | 0.063493 oz |
| Emitter- Base Voltage VEBO: | 12 V |
| DC Current Gain hFE Max: | 35 |
| Length: | 10.1 mm (Max) |
| Manufacturer: | Fairchild Semiconductor |
| Factory Pack Quantity: | 1000 |
| Part # Aliases: | KSC5603DTU_NL |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 4.7 mm (Max) |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 100 W |
| Height: | 9.4 mm (Max) |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum DC Collector Current: | 3 A |
| Continuous Collector Current: | 3 A |
| DC Collector/Base Gain hfe Min: | 20 |
| Transistor Polarity: | NPN |
| Brand: | Fairchild Semiconductor |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 800 V |
| ECCN | EAR99 |
| 数据手册： |
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