IXGR32N170AH1
  • 量产中
  • EAR99
产品描述:
IXGR32N170AH1 Series 1700 V 26 A High Voltage IGBT with Diode - ISOPLUS-247
标准包装:30
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Collector-Emitter Saturation Voltage: 4.2 V
Packaging: Tube
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 200 W
Package / Case: ISOPLUS247-3
Configuration: Single
Unit Weight: 0.186952 oz
Length: 16.13 mm
Manufacturer: IXYS
Factory Pack Quantity: 30
RoHS:  Details
Collector- Emitter Voltage VCEO Max: 1.7 kV
Maximum Operating Temperature: + 150 C
Width: 5.21 mm
Continuous Collector Current at 25 C: 26 A
Operating Temperature Range: - 55 C to + 150 C
Gate-Emitter Leakage Current: 100 nA
Height: 21.34 mm
Mounting Style: Through Hole
Continuous Collector Current Ic Max: 200 A
Continuous Collector Current: 26 A
Series: IXGR32N170
Brand: IXYS
Product Category: IGBT Transistors
Maximum Gate Emitter Voltage: +/- 20 V
ECCN EAR99
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