CSD16325Q5C specifications -Ameya360 electronic components purchase network


CSD16325Q5C

ACTIVE 8-SON-EP (5x6)
Product description : MOSFET N-CH 25V 100A 8SON
SPQ：1900
Datasheet : CSD16325Q5C.pdf
ECAD Model:

Power - Max	3.1W
Video File	NexFET Power Block PowerStack™ Packaging Technology Overview
Vgs(th) (Max) @ Id	1.4V @ 250µA
Packaging	Digi-Reel®
Rds On (Max) @ Id, Vgs	2 mOhm @ 30A, 8V
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	33A (Ta), 100A (Tc)
PCN Design/Specification	Qualification Revision A 01/Jul/2014
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
RoHS	Lead free / RoHS Compliant
Product Training Modules	NexFET MOSFET Technology
Design Resources	Create your power design now with TI’s WEBENCH® Designer
Mounting Type	Surface Mount
FET Feature	Logic Level Gate
Package / Case	8-TDFN Exposed Pad
Supplier Device Package	8-SON-EP (5x6)
Gate Charge (Qg) @ Vgs	25nC @ 4.5V
FET Type	MOSFET N-Channel, Metal Oxide
Series	NexFET™
Input Capacitance (Ciss) @ Vds	4000pF @ 12.5V

Datasheet： CSD16325Q5C.pdf

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