Width: | 6.22 mm |
---|---|
Rds On - Drain-Source Resistance: | 10 mOhms |
Pd - Power Dissipation: | 100 W |
Tradename: | OptiMOS |
Height: | 2.3 mm |
Vgs - Gate-Source Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Fall Time: | 10 ns |
Length: | 6.5 mm |
Series: | OptiMOS |
Factory Pack Quantity: | 2500 |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 29 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Transistor Type: | 1 N-Channel |
Packaging: | Reel |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TO-252-3 |
Configuration: | Single |
Unit Weight: | 0.139332 oz |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 7 ns |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | IPD30N03S2L10ATMA1 IPD30N03S2L10XT SP000254465 |
RoHS: | Details |
Id - Continuous Drain Current: | 30 A |
Rise Time: | 21 ns |
Maximum Operating Temperature: | + 175 C |