| STD6N80K5 | ||
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| 产品描述：
800V,1.6Ω,4.5A,N-Channel Power MOSFET
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| 标准包装：1 | ||
| 数据手册： -- | ||
| ECAD模型:
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| Number of Channels: | 1 Channel |
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| Rds On - Drain-Source Resistance: | 1.6 Ohms |
| Manufacturer: | STMicroelectronics |
| Pd - Power Dissipation: | 110 W |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Brand: | STMicroelectronics |
| Package / Case: | TO-252-3 |
| Id - Continuous Drain Current: | 4.5 A |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | +/- 30 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Reel |
| Qg - Gate Charge: | 7.5 nC |
| Series: | MDmesh K5 |
| Minimum Operating Temperature: | - 55 C |
| Channel Mode: | Enhancement |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
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