STD6N80K5 specifications -Ameya360 electronic components purchase network


STD6N80K5

ACTIVE EAR99
Product description : 800V,1.6Ω,4.5A,N-Channel Power MOSFET
SPQ：1
Datasheet : --
ECAD Model:

Number of Channels:	1 Channel
Rds On - Drain-Source Resistance:	1.6 Ohms
Manufacturer:	STMicroelectronics
Pd - Power Dissipation:	110 W
Transistor Polarity:	N-Channel
Factory Pack Quantity:	2500
Brand:	STMicroelectronics
Package / Case:	TO-252-3
Id - Continuous Drain Current:	4.5 A
Vds - Drain-Source Breakdown Voltage:	800 V
Vgs - Gate-Source Voltage:	+/- 30 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Qg - Gate Charge:	7.5 nC
Series:	MDmesh K5
Minimum Operating Temperature:	- 55 C
Channel Mode:	Enhancement
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vgs th - Gate-Source Threshold Voltage:	4 V
Configuration:	Single
Unit Weight:	0.139332 oz
Mounting Style:	SMD/SMT
ECCN	EAR99

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